N Hom 166mm M6 HJT Hnub Ci Cell

N Hom 166mm M6 HJT Hnub Ci Cell

Silicon Heterojunction Technology (HJT) yog ua raws li lub emitter thiab sab nraub qaum teb (BSF) uas yog tsim los ntawm qhov kub thiab txias ntawm ultra-nyias txheej ntawm amorphous silicon (a-Si: H) ntawm ob sab ntawm zoo heev ntxuav monocrystalline silicon wafers , tsawg dua 160 μm hauv thickness, thiab 6.69Watt / cell @ 24.4 feem pua ​​​​kev ua tau zoo.
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【Cov khoom piav qhia】

Silicon Heterojunction Technology (HJT) yog ua raws li lub emitter thiab sab nraub qaum teb (BSF) uas yog tsim los ntawm qhov kub thiab txias ntawm ultra-nyias txheej ntawm amorphous silicon (a-Si: H) ntawm ob sab ntawm zoo heev ntxuav monocrystalline silicon wafers , tsawg dua 160 μm nyob rau hauv thickness, qhov twg electrons thiab qhov yog photogenerated.


 HJT solar cell structure 400     Profile2

 

                                       

【Process Flow】


Process flow A black

 

【Cov yam ntxwv tseem ceeb】

High Eff thiab siab Voc

Tsis tshua muaj kub coefficient 5-8 feem pua ​​​​ lub zog tso zis nce

Cov txheej txheem bifacial

 

Cov yam ntxwv tseem ceeb

High Efficiency thiab siab Voc

Tsis tshua muaj kub coefficient 5-8 feem pua ​​​​ lub zog tso zis nce

Cov txheej txheem bifacial

 

【Technical Data】

TECHNICAL DATA THIAB DESIGN


TEMPERATURE COEFFICIENTS THIAB SOLDERABILITY

Dimension

166mm * 166mm ± 0.25


TkUoc (%)

-0.192

Thickness

150 plus 20 μm / -10 μm


TkIsc (%) / K

ntxiv 0.035

Pem hauv ntej

9 × 0.1mm Welding chaw hom pem hauv ntej electrode


TkPMAX (%)

-0.236

Rov qab

9 × 0.1 hli Vuam chaw hom rov qab electrode


Peel Strength Yam tsawg kawg nkaus

>1.4N / hli


ELECTRICAL PARAMETERS ntawm STC

Tsis muaj.

Efficiency (%)

Pwm (W)

Uoc (V)

Isc (A)

Ump (V)

Imp (A)

FF (%)

1

24.40

6.69

0.746

10.758

0.644

10.386

83.35

2

24.30

6.66

0.746

10.754

0.644

10.352

83.10

3

24.20

6.63

0.745

10.750

0.643

10.318

82.84

4

24.10

6.61

0.745

10.745

0.643

10.282

82.56

5

24.00

6.58

0.744

10.740

0.642

10.245

82.27

6

23.90

6.55

0.744

10.728

0.642

10.210

82.06

7

23.80

6.52

0.744

10.716

0.641

10.175

81.84

8

23.70

6.50

0.744

10.683

0.642

10.124

81.76

9

23.60

6.47

0.744

10.649

0.642

10.072

81.67

10

23.50

6.44

0.743

10.628

0.640

10.072

81.64

11

23.40

6.41

0.741

10.607

0.637

10.072

81.61

12

23.30

6.39

0.741

10.602

0.635

10.058

81.35

13

23.20

6.36

0.740

10.596

0.633

10.043

81.09

14

23.10

6.34

0.741

10.563

0.635

9.979

80.88

15

23.00

6.31

0.742

10.530

0.636

9.914

80.67

16

22.90

6.28

0.742

10.504

0.635

9.890

80.57

17

22.80

6.25

0.742

10.477

0.634

9.865

80.46

18

22.70

6.23

0.741

10.488

0.632

9.850

80.18

19

22.60

6.20

0.739

10.499

0.630

9.834

79.89

20

22.50

6.17

0.738

10.496

0.629

9.809

79.72

21

22.40

6.14

0.736

10.493

0.628

9.784

79.54

  

Spectral teb

 

Spectral Response 4



Intensity Depence


Intensity Dependence 4

  



Cim npe nrov: n hom 166mm m6 hjt hnub ci cell, Tuam Tshoj, lwm tus neeg, manufacturers, hoobkas, ua nyob rau hauv Suav teb

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