4H Semi-Insulating SiC wafer

Semi-insulating SiC substrates muaj kev tiv thaiv siab thiab zoo thermal zog, ua rau lawv haum rau GaN heteroepitaxial kev loj hlob thiab siab - zaus RF semiconductor daim ntaub ntawv. Raws li kev ua haujlwm siab -SiC substrate, nws yog dav siv rau HEMT- cov khoom siv hauv kev sib txuas lus siab, suav nrog 5G infrastructure.

Cov no semi-insulatingSiC waferskuj tseem muab cov khoom siv kho qhov muag thiab cov khoom siv zoo heev, txhawb nqa cov ntawv thov tshiab hauv optoelectronics thiab cov khoom siv hluav taws xob siv tau. 12-inch SiC substrates muaj peev xwm rau lwm tiam - daim ntawv thov xws li AR tsom iav thiab lwm yam khoom siv kho qhov muag siab heev.

 

6-nti
Txoj kab uas hla	150.0mm +0mm/-0.2mm
Surface Orientation	{0001}± 0.2 degree
Thawj Txoj Kev Ncaj Ncees	/
Secondary Flat Orientation	/
Qhov Loj Loj Loj	Ntsig
Secondary Flat Length	Tsis muaj
Notch Orientation	<1100>± 1.0 degree
Notch Qhov tob	Tsis muaj 1mm+0.25mm/-0mm los ntawm ntug
Lub kaum ntse ntse	90℃+5℃/-1 degree
Thickness	500.0um ± 25.0um
Hom	Semi-insulating

 

 

 

8-inch
Txoj kab uas hla	200.0mm +0mm/-0.5mm
Surface Orientation	{0001}± 0.2 degree
Thawj Txoj Kev Ncaj Ncees	/
Secondary Flat Orientation	/
Qhov Loj Loj Loj	Ntsig
Secondary Flat Length	Tsis muaj
Notch Orientation	<1100>± 1.0 degree
Notch Qhov tob	Tsis muaj 1mm+0.25mm/-0mm los ntawm ntug
Lub kaum ntse ntse	90℃+5℃/-1 degree
Thickness	500.0um ± 25.0um
Hom	Semi-insulating

 

 

12-nti
Txoj kab uas hla	300.0mm +0mm/-0.5mm
Surface Orientation	{0001}± 0.5 degree
Thawj Txoj Kev Ncaj Ncees	/
Secondary Flat Orientation	/
Qhov Loj Loj Loj	Ntsig
Secondary Flat Length	Tsis muaj
Notch Orientation	<1100>± 5.0 degree
Notch Qhov tob	Tsis muaj 1mm+0.25mm/-0mm los ntawm ntug
Lub kaum ntse ntse	90℃+5℃/-1 degree
Thickness	750.0um ± 25.0um
Hom	Semi-insulating