Khoom Taw Qhia
N-hom SiC substrates yog engineered rau homoepitaxial kev loj hlob nyob rau hauv advanced fais fab semiconductor manufacturing. Nrog superior hluav taws xob thiab thermal kev ua tau zoo, qhov kev ua haujlwm siab -SiC substrateyog haum rau siab -siv fais fab kev siv hluav taws xob tsheb, photovoltaic systems, cua zog, thiab lwm yam tshiab zog technologies.
Cov khoom lag luam suav nrog 6-nti thiab 8-ntiSiC wafersrau ntim ntau lawm thiab khoom siv thoob ntiaj teb, nrog 12-inch substrate ntau lawm muaj peev xwm muaj rau lwm tiam fais fab semiconductor daim ntaub ntawv.
Specifications
| 6-nti | |
|---|---|
| Txoj kab uas hla | 150.0mm +0mm/-0.2mm |
| Surface Orientation | 4℃rau<1120>± 0.5 degree |
| Qhov Loj Loj Loj | 47.5 hli ± 1.5 hli |
| Thawj Txoj Kev Ncaj Ncees | <1120>± 1.0 degree |
| Notch Orientation | / |
| Lub kaum ntse ntse | / |
| Notch Qhov tob | / |
| Secondary Flat | N/A |
| Thickness | 350.0um ± 25.0um |
| Polytype | 4H |
| Hom | n- hom |
| 8-inch | |
|---|---|
| Txoj kab uas hla | 200.0mm +0mm/-0.5mm |
| Surface Orientation | 4℃rau<1120>± 0.5 degree |
| Qhov Loj Loj Loj | Ntsig |
| Thawj Txoj Kev Ncaj Ncees | / |
| Notch Orientation | <1100>± 1.0 degree |
| Lub kaum ntse ntse | 90℃+5℃/-1 degree |
| Notch Qhov tob | 1.0mm +0.25mm/-0mm |
| Secondary Flat | N/A |
| Thickness | 500.0um ± 25.0um |
| Polytype | 4H |
| Hom | n- hom |
| 12-nti | |
|---|---|
| Txoj kab uas hla | 300.0mm +0mm/-0.5mm |
| Surface Orientation | 4℃rau<1120>± 0.5 degree |
| Qhov Loj Loj Loj | Ntsig |
| Thawj Txoj Kev Ncaj Ncees | / |
| Notch Orientation | <1100>± 5.0 degree |
| Lub kaum ntse ntse | 90℃+5℃/-1 degree |
| Notch Qhov tob | 1.0mm +0.25mm/-0mm |
| Secondary Flat | N/A |
| Thickness | 750.0um ± 25.0um |
| Polytype | 4H |
| Hom | n- hom |
Daim ntawv pov thawj
Cim npe nrov: 4h n-type sic substrate, Tuam Tshoj, lwm tus neeg, manufacturers, hoobkas, ua nyob rau hauv Suav teb
