Khoom Taw Qhia
P-hom SiC substrates yog tsim los rau homoepitaxial kev loj hlob thiab kev loj hlob ntawm ultra-siab-voltage fais fab semiconductor li. Nrog cov yam ntxwv zoo ntawm hluav taws xob thiab thermal, qhov kev ua haujlwm siab -SiC substrateyog tsim nyog rau kev thov siab -cov ntawv siv fais fab, suav nrog ultra-siab-voltage fais fab kis tau tus mob thiab cov phiajcim ntse.
Cov P- homSiC waferskuj txhawb kev siv hauv kev tsheb ciav hlau, kev siv hluav taws xob, thiab lwm yam khoom siv hluav taws xob siab - lub zog hluav taws xob uas muaj peev xwm siab -voltage, kev ntseeg siab, thiab kev hloov hluav taws xob zoo.
Specifications
| 6-nti | |
|---|---|
| Txoj kab uas hla | 150.0mm +0mm/-0.2mm |
| Surface Orientation | 4℃rau<1120>± 0.5 degree |
| Qhov Loj Loj Loj | 47.5mm ± 1.5mm |
| Thawj Txoj Kev Ncaj Ncees | <1120>± 5.0 degree |
| Notch Orientation | / |
| Lub kaum ntse ntse | / |
| Notch Qhov tob | / |
| Thickness | 350.0um ± 25.0um |
| Polytype | 4H |
| Hom | p- hom |
| 8-inch | |
|---|---|
| Txoj kab uas hla | 200.0mm +0mm/-0.2mm |
| Surface Orientation | 4℃rau<1120>± 0.5 degree |
| Qhov Loj Loj Loj | Ntsig |
| Thawj Txoj Kev Ncaj Ncees | / |
| Notch Orientation | <1100>± 1.0 degree |
| Lub kaum ntse ntse | 90℃+5℃/-1 degree |
| Notch Qhov tob | 1.0mm +0.25mm/-0mm |
| Thickness | 350.0um ± 25.0um |
| Polytype | 4H |
| Hom | p- hom |
| 12-nti | |
|---|---|
| Txoj kab uas hla | 300.0mm ± 0.5 hli |
| Surface Orientation | 4℃rau<1120>± 0.5 degree |
| Qhov Loj Loj Loj | Ntsig |
| Thawj Txoj Kev Ncaj Ncees | / |
| Notch Orientation | <1100>± 5.0 degree |
| Lub kaum ntse ntse | 90℃+5℃/-1 degree |
| Notch Qhov tob | 1.0mm +0.25mm/-0mm |
| Thickness | 750.0um ± 25.0um |
| Polytype | 4H |
| Hom | p- hom |
Daim ntawv pov thawj
Cim npe nrov: 4H P-Type SiC wafer, Tuam Tshoj, lwm tus neeg, manufacturers, hoobkas, ua nyob rau hauv Suav teb
