Tau qhov twg los: ecogeneration.com.au
Cov kws tshaj lij tau hais qhia tas li txog cov kev cov nyom uas PERC thev naus laus zis tau ntsib sai sai tom qab kev teeb tsa hais txog kev cuam tshuam txog kev cuam tshuam. LONGi Solar tau ua haujlwm los daws qhov teeb meem ntawm qhov muag pom kev tsis zoo (LID) hauv PERC cov hlwb thiab cov qauv coj los tiv thaiv teeb meem kev cuam tshuam thiab muaj cov qauv zoo tshaj plaws.
Ob peb xyoos dhau los, lwm lub hnub ci cell / module efficiency deg qhov teeb meem tau ntes txhua tus neeg lub siab: lub teeb thiab ua kom qhov kub siab dhau los ua kev puas tsuaj, lossis LeTID.
LeTID ntseeg tau tias ua los ntawm kev sib cuam tshuam ntawm cov hlau tsis huv thiab hydrogen hauv wafers. Nrog gallium-doped wafers nws yooj yim los tswj cov LeTID hauv cov hnub ci hlwb, vim tsis tas yuav qhia cov tshuaj hydrogen ntau dhau los ntawm tes ua rau txo LID raws li xav tau rau boron-doped wafers.
Kev tsim hluav taws xob ua rau lub ntsej muag feem ntau suav tias yog ua los ntawm boron-oxygen complex tsim nyob rau hauv lub teeb pom kev zoo, uas txo cov hnub ci cell efficiency thiab lub hwj chim dhau sijhawm tom qab kev teeb tsa. Txhawm rau txo qis LID, koj tuaj yeem txo qis oxygen nyob rau hauv wafers lossis hloov boron (B) nrog lwm qhov dopants, xws li gallium (Ga). Kev tshawb nrhiav coj los sib koom ua ke los ntawm lub koom haum rau Kev Tshawb Fawb Kev Ua Lag Luam Hnub Ci Hamelin (ISFH) thiab LONGi tau pom tias Ga-doping thiab cov pa oxygen wafers ua tau zoo, raws li pom hauv daim duab 1.
Nrog cov txheej txheem txhim kho ntawm ingot rub thiab cov chaw tsim khoom ntawm tes, cov hnub ci hlwb ua nrog Ga-doped wafers qhia kev ua tau zoo dua ntawm nruab nrab ntawm 0.06-0.12% (abs) piv rau B-doped wafers.
Los ntawm kev tshawb nrhiav thiab kev sim zoo, LONGi cov kws tshaj lij thev naus laus zis tau xaus tias teeb meem LID thiab LeTID tuaj yeem daws qhov zoo los ntawm kev siv gallium-doped monocrystalline silicon wafers nrog kev tswj cov txheej txheem ntawm tes, tsis tas yuav rov qab tsim dua tshiab (kev txhaj tshuaj lub teeb lossis hluav taws xob txhaj tshuaj).
Piv nrog boron-doped silicon wafers, gallium-doped silicon wafers tuaj yeem txhim kho qhov muaj zog ntawm PERC hlwb. Tsis muaj boron-oxygen complex nyob rau hauv gallium-doped PERC cov hlwb, yog li tsis muaj qhov ib txwm tshwm sim ntawm boron-oxygen LID. Hauv cov ntawv dawb tam sim noGallium-doped monocrystalline silicon daws cov teeb meem ntawm PERC module's LID ntau, LONGi tau muab cov ntsiab lus los tshawb pom ntawm qhov kev kawm, txhawb nqa los ntawm kev tshawb fawb ntsig txog. Kev tshawb nrhiav qhia tau hais tias kev siv cov gallium-doped silicon wafers tuaj yeem txo qis qhov pib LID los ntawm cov hlwb twg siv boron-doped p-type silicon wafers tau ntev dhau los.
Pab pawg LONGi tau ua qhov kev sim LID ntawm gallium-doped thiab boron-doped PERC cells. Kev ntsuam xyuas tau siv LONGi pawg tsim ntau bifacial PERC cov hlwb (uas muaj cov cell ua ntawm kwv yees li 22.7%). Hauv qab no yog qee qhov ntawm cov phiaj xwm ntsuas nrog rau ntsuas cov khoom, hom thiab ntau ntau ntawm cov xov tooj ntawm tes.
Ntsuas cov txiaj ntsig
1sun, 75 ° C:Txhawm rau ua kom tau raws li LeTID, LONGi tau lees paub qhov ntsuas kub ntawm 75 ° C. Daim duab 2 qhia 264-teev kev kuaj ntawm 1sun, 75 ° C. Lub xov tooj ntawm boron-doped poob rau qhov ntau kawg ntawm 2.3% ntawm 8 teev thiab tom qab ntawd rov qab mus rau qhov nqi zoo ntawm 1.3% ntawm 96 teev. Qhov tsis zoo ntawm cov nqi ntawm gallium-doped hlwb yog qhov pib ruaj khov ntawm 96 teev ntawm 1.2%, thiab tom qab ntawd maj mam degraded rau 1.3% (216 teev) thiab mam li rov qab zoo dua.
× 10suns,> 100 ° C:Cov txheej txheem LeTID tuaj yeem kho nrawm los ntawm kev coj ua × 10suns,> 100 ° C. Cov ntawv sim ntawm gallium-doped PERC cov hlwb hauv cov qauv no tau qhia hauv daim duab 3. Siv txoj kev ntsuas no, gallium-doped cell kuj tau ntsib tus txheej txheem ntawm kev txo qis thawj zaug thiab tom qab ntawd rov qab mus rau qhov ruaj ntseg. Qhov kev ua tsis tau zoo tau mus txog qhov siab kawg ntawm tus nqi ntawm 1.05% ntawm 5 feeb thiab pib ua kom ruaj khov nyob rau theem ntawm tus qauv qis ntawm 0.3% ntawm 90 feeb.
Cov txiaj ntsig tau los ntawm kev tshawb fawb ywj pheej
Tine U. Naerland los ntawm Arizona State University (nrog rau lwm cov kws tshawb nrhiav) tau kawm txog cov neeg txom nyem tsawg lub neej kev cuam tshuam ntawm indium-doped, gallium-doped thiab boron-doped silicon wafers tsis muaj impurities ntawm chav tsev 25 ° C, raws li pom hauv daim duab 4.
Nws tuaj yeem pom tias cov neeg tsav tsheb thauj neeg tsawg lub neej ntawm gallium-doped silicon wafers cia li tswj hwm tus nqi tas li ntawm 300μs tom qab 104s lub teeb raug, thaum cov uas boron-doped thiab indium-doped silicon wafers degrade tsis tu ncua thiab zoo heev. Yog li no, nyob rau hauv qis ntsuas kub lub teeb, gallium-doped silicon wafer yog qhov ruaj khov thiab feem ntau tsis muaj kev cuam tshuam. Txawm li cas los xij, nyob rau hauv qhov xwm txheej tiag tiag sab nraum zoov, qhov kub ua haujlwm ntawm lub cell yuav siab tshaj 60 ° C, thiab gallium-doped cell tseem yuav muaj qee qhov degree ntawm LeTID nyob rau hauv qhov kev ntsuas ntawm qhov kub. Nws cov kev tshawb fawb tau pom zoo kom ntev ntev ntev los ntawm LONGi cov ntaub ntawv xeem ua rau LID ntawm gallium-doped PERC cov hlwb thiab cov roj ntshav PERC uas muaj rov los ua dua tshiab nyob rau qhov sib txawv.
Lwm txoj kev tshawb fawb tau ua los ntawm Nicholas Grant thiab John Murphy los ntawm University of Warwick uas nyuam qhuav kawm txog kev muaj peev xwm ntawm indium doping thiab pom tau tias nws cov sib sib zog nqus txais yuav txwv nws lub peev xwm. “Gallium-doped silicon tau qhia txog kev ua haujlwm ruaj khov thiab muaj lub neej nyob siab thaum raug teeb pom kev zoo ntxiv. Tsis tas li tseem tsis tau muaj kev cuam tshuam txog lub zog ua tsis raug, "said Grant hauv kev sib tham tsis ntev los no nrog ib phau ntawv teev hnub ci kev lag luam.
Daim ntawv thov ntawm gallium-doped silicon wafers tuaj yeem txo qhov pib LID los ntawm cov hlwb uas siv boron-doped p-type silicon wafers tau ntev raug. Li no, gallium-doped silicon tsis xav tau cov kauj ruam ntxiv kev ruaj khov uas siv los txo kev puas tsuaj, tsis zoo li cov kab mob boron-doped. Qhov nruab nrab ntawm kev ua haujlwm ntawm cov kab mob gallium-doped hlwb yog 0.09% siab dua qhov ntawm cov boron-doped hlwb.
Nws tau hais tias "Kuv pab neeg tau ua kom muaj kev sim ntsuas lub cev thiab tsis muaj qhov cuam tshuam zoo ntawm PERC lub hnub ci hlwb siv cov roj ntsha silium substrate tau pom," nws hais. "Ua piv txwv, peb tau soj ntsuam kev puas tsuaj rau qhov sib luag ntawm PERC lub xov tooj cua hnub ci nrog cov boron-doped silicon substrate nyob rau hauv tib txoj kev sim."
