Muaj TCOs Rau SHJ Cov Hlwb Hlav Hnub Ci: Tshaj Tawm Rau Kev Ua Kom Zoo Dua Thiab Nqi

Oct 05, 2020

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Luam tawm thawj zaug hauv Photovoltaics International, Tsab Ntawv 44, Tsib Hlis 2020

Alexandros Cruz1, Darja Erfurt1, René Köhler2, Martin Dimer2, Eric Schneiderlöchner2& amp; Bernd Stannowski1

Abstract

Silicon heterojunction (SHJ) lub hnub ci cell technology yog lub thev naus laus zis zoo tsim kom loj-ntau lawm ntawm cov hnub ci hlwb nrog kev hloov dua siab tshiab ntau tshaj 24%. Ib qhov tseem ceeb ntawm SHJ hnub ci hlwb, sib piv nrog niaj hnub no' s siv dav dhau emitter thiab sab tom qab sib cuag (PERC) xov tooj ntawm tes, yog kev siv cov pob tshab hluav taws xob oxide (TCO), uas ua rau muaj kev sib tw hauv kev ua tau zoo thiab cov nqi tab sis kuj qhia txog cov cib fim. Daim ntawv no yuav tham txog cov kev sib tham thiab qhia txog qhov zoo ntawm kev txhim kho cell muaj txiaj ntsig ntawm kev txo nqi los ntawm kev siv TCOs tshiab uas tau tso los ntawm ncaj qha tam sim no (DC) sputtering. Cov xwm txheej ntawm lub nraub qaum SHJ hlwb, nws muaj peev xwm txo qis, lossis tseem zam, kev siv indium hauv xws li TCOs, nrog aluminium-doped zinc oxide (AZO) yog qhov hloov pauv rau indium-oxide-based TCOs. Muaj cov TCOs ua tau zoo rau qhov loj-loj ntawm qhov loj, uas yuav txhawb kom lub lag luam nkag ntawm SHJ cov hlwb, tau muab los sau ua ke.

Piv txwv ntawm TCO cov khoom siv loj-rau kev tsim khoom: VON ARDENNE tus XEA|nova L

Taw qhia

Silicon hnub ci hlwb raws li passivated emitter thiab sab tom qab kev sib cuag (PERC) technology tau mus txog ntau qib gigawatt nyob rau hauv cov huab hwm coj ntau lawm, nrog kev hloov pauv siv hluav taws xob (CEs) ntawm 22% thiab tam sim no nce mus txog 23%. Rau qhov ntau dua CEs, cov neeg sib tiv toj tau raug suav hais tias yog cov neeg ua haujlwm tshiab ntawm tes thev naus laus zis. Ntawm no, silicon heterojunction (SHJ) thev naus laus zis yog qhov muaj kev cia siab thiab muaj kev sib tw tawm ntawm lub rooj vag pib, nrog CE ntawm 23 having24% tau twb tau qhia tag nrho cov kev zam, tsis yog hauv kev sim ua haujlwm tab sis tseem nyob rau hauv kev ua lag luam largescale [ 1]. Thaum nws yog Panasonic (yav dhau los Sanyo) uas tau pib siv cov thev naus laus zis no, ntau cov neeg ua si thoob ntiaj teb tau tsim kho lawv tus kheej cov kab ntau lawm, xws li ENEL Green Energy thiab Hevel Solar hauv Europe, thiab REC, Jinergy, GS-Solar thiab ntau lwm yam. nyob rau sab Asia. Cov txiaj ntsig tseem ceeb ntawm SHJ thev naus laus zis tau tham nyob hauv ib tsab xov xwm tsis ntev los no los ntawm Ballif et al. [2]. Dhau li ntawm daim siab CE, qhov zoo tseem ceeb ntawm SHJ yog lub qov ntau lawm, uas tsuas yog plaub qhov tseem ceeb uas yuav tsum tau ua rau ob tog sib txig:

1. Ntub-ntxuav thiab texturing ntawm wafers.

2. a-Si: H deposition los ntawm ntshav-txhim kho cov tshuaj vapor deposition (PECVD).

3. Qhov kev tso tawm ntawm cov pob tshab conductive oxide (TCO) txheej los ntawm lub cev vapor deposition (PVD, feem ntau ua rau).

4. Vijtsam luam tawm ntawm cov ntawv nyiaj.

Vim tias qhov ntsuas kub tsawg tsawg (& lt; 200 ° C) cov txheej txheem thiab cov khoom siv sib tshooj, qhov kev ntxhov siab wafer dabtsi yog khoov thiab tawg tuaj yeem zam, uas txhais tau tias kev zam tau siv tau, yog li txuag cov nqi khoom thiab lub zog. Cov txheej txheem SHJ tshwm sim ib txwm muaj ntawm bifacial cell tsim; ntxiv rau, SHJ cov hlwb muaj qhov kub qis tshaj coefficient nyob hauv qhov chaw, feem ntau –0.28% / ° C. Kev sib xyaw ntawm bifaciality thiab tsis tshua muaj kev sib txig ua kom muaj zog ua kom muaj zog ntawm ib qho PV system.

Ntawm qhov tod tes, qee qhov tseem ceeb txwv tsis pub muaj kev nce ceev ceev ntawm kev txhim kho ntawm SHJ thev naus laus zis yog cov cuab yeej siv khoom kim, feem ntau rau PECVD (tab sis kuj rau PVD), thiab cov xov tooj sib txuas rau xov tooj rau cov lag luam tsim tawm (tsis muaj cov qauv siab-kub soldering). Ntau Ag muab tshuaj ntxiv yog qhov xav tau tshaj rau Si hlwb txheem, vim tias qhov tshuaj tiv thaiv tsis kub, yielding qis dua kev coj ua ntiv tes; qhov no, txawm li cas los xij, nyob ntawm qhov kev sib tshuam sib txuam, tshwj xeeb yog siv pob npav los yog tsis siv. Thaum kawg, thiab tham txog ntau yam nyob hauv daim ntawv no, cov hom phiaj rau kev cuam tshuam TCO cov khaubncaws sab nraud povtseg ntawm ob sab yog qhov xav tau, uas raug nqi ntau rau cov ntaub ntawv uas feem ntau ua haujlwm.

Indium oxide (Hauv2O3) doped nrog tin (Sn), hu ua ITO, yog tam sim no feem ntau siv TCO [3–5]. No cov pob tshab conductive oxide tau paub zoo los ntawm qhov ntau lawm hauv cov vaj huam sib luag tiaj tiaj cov lus qhia (FPD) thiab cov khoom pov thawj uas tsim nyog opto-electronic, xws li tsis kam tiv thaiv tsawg ntawm cov khaubncaws sab nraud povtseg thiab txaus pob tshab hauv qhov pom. Kev txiav txim siab tseem ceeb rau FPD ntau lawm, ITO tuaj yeem ua tiav los ntawm photolithography, raws li nws yog etchable (nyob rau hauv lub xeev li-tso cia) thiab yog lub sij hawm ntev ruaj khov tom qab cov khoom lag luam-kub crystallization thaum thermal annealing ntawm 150-200 ° C. Feem ntau, ITO tau muab tso los ntawm kev ncaj qha tam sim no (DC) magnetron sputtering rau ntawm qhov chaw loj. Txawm hais tias DC sputtering pib ua rau qee qhov kev puas tsuaj ntawm silicon nto passivation, qhov no yog tag nrho annealed ntawm qhov kub thiab txias nyob ib puag ncig 200 ° C, uas tau mus txog thaum lub caij sputtering lossis tom qab lub sijhawm kho ntawm Ag muab tshuaj tom qab tshuaj ntsuam luam ntawv.

Hauv kev sib piv rau FPDs, TCO yuav tsum tau ua tiav cov kev xav tau ntxiv thaum thov rau sab xub ntiag ntawm SHJ hlwb, uas yog pob tshab zoo tshaj plaws nyob rau hauv qhov dav yoj ntev ntawm 300–1,100 nm. Daim duab 1 qhia txog kev nqus ntawm cov txheej txheem ntawm TCO ntau qhov, qhia pom qhov sib txawv ntawm kev nqus parasitic hauv cov cai luv-thiab ntev-ntev. Dhau li ntawm qhov nqus qis no, kev tiv tauj qis qis nrog ob qho ntawm n- thiab p-doped silicon cov khaubncaws sab nraud povtseg, nrog rau nrog daim phiaj hlau, yuav tsum ua rau TCO txheej ntawm ob sab. Thaum kawg, tab sis tsis tsawg kawg, cov kev txwv ntawm tus nqi ntawm lub hnub ci lub hlwb yog qhov nruj heev, thiab, kom xav txog PV ntawm lub ntsuas terawatt, nws yog qhov tseem ceeb kom txo qis (los yog zoo dua qub tseem, zam) siv cov khoom tseem ceeb lossis tsis tshua muaj, xws li indium ( Hauv). Qhov kawg tom ntej, txawm li cas los xij, tseem nyuaj rau cov chaw nyob, vim tias feem ntau cov khoom siv TCOs muaj indium. Ib qho kev xaiv yog ua kom txo tau cov tuab ntawm xws li TCOs, uas tom qab ntawd xav tau txheej thib ob kom tso nyiaj txhawm rau txhawm rau tswj kom muaj qhov zoo tshaj plaws kho qhov muag (tiv thaiv kev cuam tshuam). Qhov no, nyeg, nce tus naj npawb ntawm cov txheej txheem cov kauj ruam thiab, yog li, cov txheej txheem tsis yooj yim thiab cov nqi.

Daim ntawv no hais txog qhov ua tau zoo ntawm TCO rau kev sib xyaw ua ke hauv SHJ hnub ci hlwb. Ib qho metric yog nthuav tawm rau kev ntsuas thiab ntsuas tus qauv TCOs sib txawv txog lawv qhov kev haum rau daim ntawv thov hauv SHJ hlwb. Txhawm rau kom txo qhov kho qhov muag ploj hauv pem hauv ntej TCO, kev siv cov ntaub ntawv nrog lub siab pom yog qhov yuav tsum tau ua. Ib lub txim siab-cov cab kuj muaj, feem ntau> 100 cm2/ Vs, tso cai rau kev txo qis hauv cov khoom thauj ntom ntom (ntawm qhov tsis kam tiv taus), yog li txo qhov kho qhov muag ploj vim qhov kev thauj khoom ywj pheej (FCA).

Ntau yam khoom siv 'siab-txav mus los' TCO raws indium oxide nrog cov dopings sib txawv tau raug tshawb fawb yav dhau los [6-13]. Tag nrho cov khoom pov thawj no zoo heev raws li TCO cov khaubncaws sab nraud povtseg ntawm iav thiab feem ntau ntawm lawv lub siab CE dhau los. Hom phiaj kev tsim khoom, txawm li cas los xij, nws nyuaj thiab tus nqi yog siab rau ntau yam ntawm cov ntaub ntawv no.

Cov TCOs tshiab uas tuaj yeem ua tiav nyob rau hauv kev lag luam loj los ntawm cov hom phiaj tig tau tam sim no, yielding siab mus ncig thiab tsim tau SHJ hlwb nrog CE siab. Cov xwm txheej hauv qab uas AZO ua qhov tsis muaj indium thiab tsis raug nyiaj tsawg dua tuaj yeem coj los ua haujlwm siab hauv SHJ hlwb yuav tau tham txog tom qab. Tus nqi piv ntawm In-based thiab ZnO-based cov hom phiaj tseem yuav tau nthuav tawm.

Daim duab 1. Optical nqus spectra rau ntau hom TCO txheej ntawm cov tuab

TCO rau SHJ hnub ci hlwb

Yav dhau los, ntau cov ntaub ntawv ntawm TCO tau tshawb fawb rau kev siv hauv SHJ hnub ci hlwb. Cov kev cai tseem ceeb rau qhov kev siv no yog kev coj ua tau zoo thiab qhov siab tshaj, nrog kev ua cov txheej txheem kub qis dua 200 ° C (vim tias kev nkag siab ntawm nyias-zaj duab xis silicon passivation txheej), zoo li kev sib cuag tau zoo nrog cov txheej nyob sib ze [14].

Ntawm qee qhov ntawm TCOs, polycrystalline Sn-doped Hauv2O3(ITO) zus nyob rau hauv qhov kub thiab txias qis dua 200 ° C, uas mus txog rau hluav taws xob muaj hluav taws xob ()e) ncig 40cm2/ Vs [3–5], tau pom muaj ntau daim ntawv thov hauv SHJ hnub ci hlwb. Raws li TCOs doped nrog lwm cov hlau, xws li titanium (Ti) [15,16], zirconium (Zr) [6,12,13], molybdenum (Mo) [15,17–19] thiab tungsten (W) [ 10,11], cov pa tawm μe ntau dua 80 cm2/ Vs ntawm lub tsub nqi ntawm cov tsheb sib tsoo (ne) ntawm 1 × 1020 txog 3 × 1020 cm-3.

Cov khaubncaws sab nraud povtseg no tuaj yeem muab tso tawm los ntawm magnetron sputtering, pulsed laser deposition (PLD), thiab ion plating nrog DC arc paug lossis reactive plasma deposition (RPD). Tawm ntawm cov no, sputtering yog qhov qauv tsim qauv rau kev tsim khoom loj. Ib qho kev txav dua ntawm μe> 100 cm2/ Vs tuaj yeem ua tiav rau cov khoom-theem crystallized (SPC) hydrogen (H) -doped Hauv2O3(IOH) [6–9] thiab cerium (Ce) ICeO: H [7] zaj duab xis nrog 1 × 1020<>< 3="" ×="" 1020="">-3Cov. Cov yeeb yaj kiab no tau muab tso rau qhov kub qis hauv qhov amorphous matrix thiab tom qab ntawd annealed ntawm qhov kub siab tshaj 150 ° C, uas ua rau muaj qhov siab valuese qhov tseem ceeb vim tias kev tsim cov nplej loj.

Cov TCOs qhia saum toj no yog qhov txaus nyiam vim tias lawv qhov ua tau zoo opto-hluav taws xob, tab sis mus txog rau hnub tim ITO thiab IWO: H tau pom lawv txoj hauv kev lag luam ntau lawm. Qhov tsis txaus ntawm indium, txawm li cas los xij, yog qhov kev txhawb nqa rau kev nqis tes ua ntawm lwm txoj haujlwm TCOs. AZO muab qhov kom zoo dua ntawm muaj cov muaj cov khoom siv ntau dua. AZO txheej nrog lub tuab ntawm ntau pua nanometers, sputtered ntawm qhov ntsuas kub kom siab> 250 ° C, tawm zoo opto-hluav taws xob thaj chaw [20] thiab tseem muaj kev ruaj ntseg [21].

Cov khaubncaws sab nraud povtseg tuab ntawm tsawg dua 100 nm tso rau qhov kub thiab txias qis dua 200 ° C, raws li xav tau rau SHJ hlwb, hauv kev tsis sib xws ua rau cov qauv siv lead ua tsis zoo, yog li ua rau cov khoom siv qis tsis zoo nyob ib puag ncig 20cm2 / Vs thiab tsis muaj lub siab ntev kev ruaj ntseg [22]. Txhim kho qhov ruaj khov rau SHJ hnub ci hlwb, txawm li cas los xij, tau pom los ntawm kev thov amorphous silicon oxide (a-SiO2) capping [23].

Raws li qhia los ntawm μecov txiaj ntsig tau, thiab nyob ntawm cov txheej txheem ua haujlwm, cov TCOs sib txawv qhia tau ntau yam ntawm cov khoom siv hluav taws xob. TCO daim ntawv tiv thaiv (R) cov kab ke tuaj yeem muab faib raws li qhia hauv Cov Lus Qhia 1. Ntawm no, cov chaw thauj khoom siab thaj tsam 1.5 × 1020<>< 2.0="" ×="" 1020="">-3tau txiav txim siab: qhov no sawv cev rau kev txiav txim siab zoo rau kev ua tiav FCA qis, kev siv hluav taws xob zoo thiab kev sib cuag zoo nrog cov txheej txheej nyob ze, thiab 75 nm TCO tuab rau cov khoom tiv thaiv zoo nkauj.

Cov kab lus hauv SHJ ntawm tes ua thiab kev siv ((hom-) ​​wafers nrog cov thauj tus neeg siab heev tso cai rau ib qho kev xaiv ywj siab xaiv uas sib cuag (n lossis p) ntsib sab xub ntiag. Txoj haujlwm ntawm p sib tiv tauj (hlws ris) muaj qhov cuam tshuam rau kev ua kom tau zoo ntawm TCO pem hauv ntej kom tau txais ob qho siab thiab tsis tshua muaj siab series Rsntawm tes [24-27]. Txhawm rau ua kom pom qhov no, Daim Duab 2 qhia pom schematic tus ntoo khaub lig ntawm bifacial thiab monofacial SHJ hnub ci hlwb hauv kev rov ua haujlwm sab nraud nrog txhua lub Rs pab qhia. Cov kev soj ntsuam ntxaws ntawm Rs cov cheebtsam thiab lawv cov kev koom tes hauv SHJ hnub ci hlwb muaj peev xwm nrhiav tau hauv Basset et al. [25] thiab Wang li al. [28]. Lub siab thev naus laus zis, piv txwv li ntom ntom nti thiab txav tau, ntawm cov khoom siv hluav taws xob hauv c-Si wafer, nrog rau kev sib tiv tauj tsawg kawg ntawm kev sib cuag n / TCO, nyiam qhov kev xaiv ntawm n tiv tauj nyob rau sab pem hauv ntej ('rear hlws ris'), raws li rau ib sab kev thauj tam sim no yog muaj kev txhawb nqa los ntawm wafer. Qhov no so cov conductivity uas yuav tsum tau ntawm TCO (daim ntawv tsis kam ua haujlwm), yog li tso cai rau kev ua kom tau zoo ntawm kev siab tshaj plaws.

Txhawm rau piav qhia txog cov txiaj ntsig ntawm cov kev ywj pheej hais txog kev tsim nyob hauv cell tsim, Daim duab 3 nthuav tawm simulated Rs nkhaus ua ke nrog kev sim ntsuas cov txiaj ntsig ntawm cov hnub ci hlwb, nrog ITO cov txheej txheem hloov pauv los ua haujlwm ntawm lub hauv ntej-TCO daim ntawv tsis kam. Cov txiaj ntsig sim ua rau muaj qhov tseeb ntawm cov qauv [27]. Raws li tuaj yeem pom meej meej, tus tsim nraub qaum-txuas tau muab ib qho txiaj ntsig rau cov qib siab-ua haujlwm ntawm TCOs los ntawm txiaj ntsig los ntawm kev txhawb nqa tom ntej hauv kev xaiv hluav taws xob hauv kev siv hluav taws xob hauv Si wafer. Kev tsim kho ntawm sab nraud, ntawm qhov tod tes, zoo dua rau txheej qis-resistivity TCO txheej; qhov kev tsim qauv no tau txais txiaj ntsig ntawm qis dua transversal Rs pab, txij li cov xaim hluav taws xob, muaj lub siab dua ntawm lub qhov, mus ncig rau sab nraub qaum ntawm wafer (nrog photogeneration mas tshwm sim ze rau sab pem hauv ntej). Kev lag luam tawm ntawm txoj kev tiv thaiv tom qab thiab transversal Rs yuav txiav txim siab cov xov tooj ntawm tes uas hnub ci tsim yog feem ntau, nyob ntawm TCO daim ntawv tsis kam.

Tus Rcov kab rau cov TCOs sib txawv tau hais qhia hauv cov ntawv nyeem thiab raws li tau txhais hauv Cov Lus 1 yog qhia hauv Daim Duab 3 nrog rau cov xim sib xws. TCOs nrog qis R(liab) tau txais txiaj ntsig ntau dua thaum ua tiav nyob rau hauv pem hauv ntej kev sib tsoo ntaus, thaum TCOs nrog nruab nrab-R(xiav) nyob hauv thaj av uas hloov uas Rsqhov sib txawv ntawm kev sib txuas pem hauv ntej thiab sab nraub qaum-sib txuas tau sib txawv me me. Hauv kev sib piv, TCOs nrog R siab(txho) tau pom tseeb zoo thaum siv hauv kev tsim-nraub qaum; qhov no yog qhov zoo rau AZO, piv txwv li, nrog nws ua rau pob tshab tab sis tsis muaj tus cwj pwm, tseem tseem ua rau tib lub zog SHJ cell> 23% raws li ITO siv xov tooj ntawm [23]. Ntawm Helmholtz-Zentrum Berlin, SHJ hnub ci hlwb nrog ob ITO- thiab AZO-hauv ntej TCO tau tiav daim ntawv pov thawj CE saum toj no 23.5% [29].

Lwm qhov kev tawm tswv yim uas ua kom zoo dua ntawm wafer tom qab kev thauj mus los txhawb nqa, pom los ntawm qee pab pawg tshawb fawb [27,30] thiab hauv kev sim ua haujlwm [31], yog kom ua raws li cov TCOs uas tsis tshua muaj, uas txo cov parasitic nqus, yog li tswj lossis txhim kho hnub ci cell CE. Kev siv cov txheej txheem TCO ua kom nyias nyias, txawm li cas los xij, yuav tsum muaj txheej txheej thib ob nyob rau sab saum toj - piv txwv li SiO2lossis Si3N4- txhawm rau tuav cov kev ua zam (AR) zoo [32-34].

Txhawm rau kom paub tseeb qhov tseeb ntawm kev ua haujlwm tau zoo ntawm txawv TCOs thaum ua tiav nyob rau hauv pawg xov, piv txwv li txiav txim siab tshwj xeeb poob hauv qhov luv luv-tam sim no qhov ntsuas tam sim no (Jsc), kev sim ua nrog lub cuab yeej siv duab tshav (nrhiav) (GenPro4 [35]) tau ua tiav. Kev suav nrog TCO ntsig txog lub zog hluav taws xob poob hauv lub xov tooj vim tias ob qho kev nce nqi ntawm Rs thiab qhov poob qis ntawm Jsc, cov ntaub ntawv TCO sib txawv tau raug ntsuas, raws li pom hauv daim duab 4. Rau lub hom phiaj no, ib qho siv hluav taws xob hnub ci cell nrog CE=23.3 % tau txiav txim siab, yam tsis muaj TCO-cuam tshuam hauv Jscthiab Rs(FF). IOH, ITO thiab AZO tau kawm ua piv txwv ntawm qes-R, nrab-Rthiab qib high-Rregimes ntsig txog.

Kev ua raws li ob qho qauv ntawm 75 nm-tuab ('tuab') thiab kev xaiv ua kom zoo dua ('nyias') TCOs tau kawm. Txhawm rau qhov kev sib piv ncaj ncees (piv txwv li nyob hauv AR zoo nyob rau hauv txhua kis), txhua lub hlwb (nrog 'tuab' thiab 'nyias TCOs) tau tiav nrog ib qho-SiO2capping txheej. Kev tiv thaiv kev sib tiv tauj ntawm TCO / Ag thiab TCO / Si cuam tshuam tau txais kev txiav txim siab (qis thiab) sib luag rau tag nrho peb TCOs, uas, tau kawg, yog ib qho yooj yim. Qhov no yuav tham txog tom qab thiab tau nthuav tawm hauv Haschke et al. [36]. Cov ntsiab lus ntxiv ntawm txheej txheej optimized txheej thicknesses thiab sim tau tshwm sim muaj nyob hauv Cruz et al. [27].

Cov duab hauv Daim Duab 4 qhia txog TCO ntsig txog lub zog hluav taws xob vim qhov txo qis ntawm Jsc thiab nce rau Rs, rau sab nraub qaum-kev sib tshuam (Daim duab 4 (a)) thiab rau pem hauv ntej-kev sib tshuam (Daim duab 4 (b)) khoom siv. Kom meej meej, IOH ua tau zoo dua ntawm lwm ob TCOs vim tias nws qhov zoo tshaj opto-electronics hauv ob qhov teeb meem no. Hauv Daim duab 4 (a), qhia cov tuab ntawm ITO thiab AZO, cov ntaub ntawv them lawv cov CE poob, vim tias qis dua conductive AZO qhia qis parasitic nqus dua li ITO. Thaum qhov no piv nrog cov TCOs uas tsis tshua pom tshiab, nws tuaj yeem pom tias CE poob qis me ntsis ua rau muaj kev sib txuam nrog kev txo TCO parasitic haum. Lub ITO kom meej meej tau txais txiaj ntsig ntau dua los ntawm cov thinning no, vim tias nws qhov sib piv siab dua cov kab mob sib kis, thaum kawg ua rau CE zoo me ntsis dua nrog AZO. Qhov no qhia tau hais tias thinner TCOs nrog kho kom zoo dua optics tuaj yeem ua tiav nyob rau hauv kev sib txuas nraub qaum thiab yuav tau txais txiaj ntsig zoo ntawm CE.

Ntawm qhov tsis sib thooj, saib ntawm sab nraub qaum kev tsim tsim hauv Daim Duab 4 (b), tuaj yeem pom tias lub siab-kev coj ua IOH yuav tsis raug kev txom nyem los ntawm qis qis dua kev thauj khoom los ntawm wafer. Qhov qis-conductivity ITO thiab AZO, txawm li cas los xij, nce lub resistive losses. Txo cov tuab ntawm ITO tsis ua rau qhov zoo ntawm CE, qhov tseeb tab sis ntawm AZO nws yog qhov kev cuam tshuam meej meej. Nws tuaj yeem txiav txim siab tias lub siab-conductivity TCO, ntawm no IOH hauv qhov piv txwv, tuaj yeem siv rau ob qho tib si sab nraub qaum - thiab pem hauv ntej sab nraud txoj kab hluav taws xob tsis muaj kev sib txawv loj hauv CE poob. Tsawg-conductivity TCOs - xws li ITO thiab AZO - yuav raug kev txom nyem los ntawm cov qib siab ntau dua Rs tam sim no nyob rau hauv kev sib txuas pem hauv ntej. Kev nyo tawm ntawm TCO ntawm sab nraub qaum sab hnub ci lub hlwb muaj txiaj ntsig yog tias TCO ntau dua li qee qhov kev nqus tau, txawm tias TCO muaj qhov pib qis, ntawm no AZO hauv qhov piv txwv. Hauv kev tsim ua ntu xub ntiag, kev nyias nyias yuav tsuas nqa cov txiaj ntsig me me, lossis tej zaum kuj yuav ua rau tsis zoo rau TCOs qis dua kev ua haujlwm xws li AZO.

Ua tau zoo ntawm TCOs muaj-kev kub siab

Txhawm rau kuaj cov khoom ua kom siab-TCOs sputtered ntawm tus nqi siab los ntawm DC sputtering los ntawm cov hom phiaj tub luam, raws li tau ua hauv cov khoom loj loj ntau lawm, cov khoom siv sib txawv tau siv rau pem hauv ntej TCO hauv bifacial rear-hlws ris SHJ hnub ci hlwb. Ob hom kev ua haujlwm siab ntawm TCO tau kuaj, uas yog titanium-doped indium oxide (ITiO) thiab indium oxide nrog ib hom doping tsis tuaj yeem ('Y'). Tsis tas li ntawd, ITO nrog ntau qhov doping ntau qhov kev sim tau sim, uas yog muaj 97% indium oxide thiab 3% tin oxide hauv lub hom phiaj ('97 / 3 ') thiab ITO 99/1. Raws li cov ntaub ntawv siv, ITO 97/3 tau nqis tes siv rau sab nraub qaum ntawm txhua lub hlwb. Ib pawg ntawm cov hlwb nrog ITO 95/5 ntawm ob sab pem hauv ntej thiab nram qab los kuj tau nrog.

Cov txheej txheem sib txawv ntawm cov iav ntawm tsom iav TCO daim ntawv resistances nyob rau hauv thaj tsam 36–136 Ω tom qab kev tso nyiaj thiab kev zam rau 30 min ntawm 200 ° C nyob rau hauv thaj chaw puag ncig, uas yog piv rau cov tshuaj tua tau ua tom qab tshuaj ntsuam luam ntawv. Qhov no yog cov kab kev haum rau kev siv raws li kev tiv tauj pem hauv ntej hauv kev sab nraud-kev sib cog lus SHJ hnub ci hlwb, raws li tau tham ua ntej (saib Daim Duab 3). Nws yuav tsum raug coj mus rau hauv tus account, txawm li cas los xij, tias TCO cov khaubncaws sab nraud povtseg tso rau ntawm iav yuav nthuav tawm cov yam ntxwv (cov khoom thauj lub cev) txawv ntawm cov thaum cov khaubncaws sab nraud povtseg tau tso rau ntawm silicon, raws li xav tau rau lub hnub ci hlwb. Qhov no tau raug teeb meem rau ob qhov cuam tshuam [29]: (1) cov siv lead ua sib txawv thiab, yog li no, cov qauv lis (2) cov ntsiab lus hydrogen sib txawv uas sib txawv ntawm txheej txheej silicon rau hauv TCO.

Cov khaubncaws sab nraud povtseg ITiO thiab Y muaj cov khoom siv hluav taws xob siab txog li 90cm2 / Vs, tab sis nrog cov sib txawv tus neeg nqa khoom sib txawv, uas yog 2 × 1020cm-3thiab ~ 0.8 × 1020cm-3feem. Rau ITO97 / 3 thiab ITO99 / ​​1 zaj duab xis, qis dua qhov tseem ceeb ntawm kev mus ncig, ntawm thaj tsam 60 thiab 70 cm2/ Vs ntawm tsaws-kev thauj khoom qhov ntau ntawm 2.7 × 1020 cm-3thiab 1.8 × 1020cm-3feem, tau ntsuas. Raws li qhov ua rau cov neeg tsav tsheb thauj khoom tsawg heev, Y cov yeeb yaj kiab qhia pom cov pa dej qis qis qis tshaj plaws nyob rau thaj tsam ze-infrared (saib Daim Duab 1), uas ua rau cov khoom siv no tau cog lus zoo tshaj plaws rau kev ua tiav ntau tshaj Jsc thiab, tej zaum, siab tshaj CE nyob rau hauv hnub ci hlwb.

TusI–Vcov kev ntsuas ntawm txhua pawg ntawm cov ntsuas pom muaj nyob hauv Daim duab 5. Txhua lub hlwb muaj qhov sib piv ntawm qhov sib luag qhib hluav taws xob (Voc), nrog cov kho kom haum hauv cov qhov nqaim li ntawm 737-738 mV. Qhov no tau lees tias qhov passivation tsis degrade vim qhov sib txawv sputter puas tsuaj. Raws li qhov xav pom, lub hnub ci hlwb nrog siab ua haujlwm nrog TCOs tawm los rau siab tshaj Jscqhov tseem ceeb, nrog kev sib kho ntawm 39.0 mA / cm2thiab 39.2 mA / cm2rau ITiO thiab Y feem. Qhov no nce txog 0.5 mA / cm2siab dua li uas tau ua tiav nrog kev siv ITO97 / 3.

Txawm tias muaj lub siabJscthiab zooVocqhov tseem ceeb, txawm li cas los xij, lub hlwb nrog kev tiv thaiv Y-rau pem hauv ntej tsis ua qhov ua tau zoo tshaj plaws. Qhov ntsuas nruab nrab siab tshaj plaws ntawm 22.9% tau ua tiav rau ITO99 / ​​1, thaum tus nqi siab tshaj plaws ntawm CE ntawm 23.3% ntsuas rau ib lub xovtooj ntawm nrog ITiO. Lub Qib qis CE nyob rau hauv cov ntaub ntawv tus Y kuaj tau los ntawm qis dua FF nruab nrab ntawm tsuas yog ib puag ncig 77%, uas yog vim muaj tus nqi Rs uas yog muaj nuj nqis siab dua; qhov tseeb, lub hlwb nrog kev tiv thaiv Y-rau pem hauv ntej tawm qhov siab tshaj plaws nruab nrab Rs qhov tseem ceeb ntawm 1.3-1.6 Ω cm2Cov. Hauv kev sib piv, qhov nruab nrab Rs tus nqi yog 0.9 Ω cm2rau ITO99 / ​​1 lub hlwb, uas ua rau muaj qhov nruab nrab siab duaTxiavntawm 79.5%.

Cov lus 1. Piv ntawm cov hluav taws xob cov hluav taws xob ntawm TCOs sib txawv.

Daim duab 2. Schematic cross-sectional views ntawm sab nraub qaum-txuas silicon heterojunction (SHJ) hnub ci hlwb: (a) bifacial cell tsim; (b) monofacial cell tsim, nrog cov tawm tsam ua haujlwm (Reye) Cheebtsam tau qhia.

Daim duab 3. Series tsis kam tiv thaiv rau pem hauv ntej-TCO daim ntawv tsis kam rau pem hauv ntej- thiab sab nraub qaum-kev sib txuam SHJ hnub ci. Cov kab nrig sawv cev rau kev sim ua ntu, thaum cov thawv qhia cov txiaj ntsig ntsuas ntsuas lub hlwb nrog ITO kev hloov.

Tseem ceeb ntawm kev tiv tauj tsis tshua muaj

Lub siab muaj peev txheej tiv thaiv cov hlwb nrog (kev thauj khoom tsawg thiab) muaj kev tuaj yeem loj-TCO yog qhov tseeb ib qho kev xav uas yuav tsum muaj kev sib zog. Ntau dua precisely, ob lub ntsiab ntawm Rsntawm no yog cov tiv tauj tiv thaiv ntawm TCOs nrog cov n- thiab p-doped silicon cov khaubncaws sab nraud povtseg, uas tau tshawb xyuas qhov tseeb hauv cov ntaub ntawv [37-40]. Tus n-doped c-Si-based hnub ci hlwb, kev tiv tauj ntawm TCO nrog cov n-doped Si cov khaubncaws sab nraud povtseg tuaj yeem yog tus cwj pwm los ntawm ntau yam, yooj yim, cov tswv yim, xws li Cox thiab Strack [41] lossis kev sib kis -line [42] kev. Kev tiv tauj tiv thaiv ntawm TCO nrog p-doped Si txheej (TCO / p), hauv kev tsis sib haum, yog qhov nyuaj rau kev nkag mus, vim tias qhov kev sib tshuam tau tsim. Raws li qhia los ntawm Basset li al. [21] thiab Wang li al. [24], piv txwv, cov qauv yooj yim rau rho tawm tus nqi ntawm Rstivthaiv yog los rub txhua tus nkag tau ntawm Rs, thiab tus nqi seem yog tom qab ntawd tau xaus tias yog TCO / p tiv taus tiv.

Tus hu tiv taus ρcnyob ntawm cov ncauj lus kom ntxaws band thiab band dabtsi yog khoov, ntxiv rau ntawm lub interface puas xeev; yog li no, ntau qhov tsis tseem ceeb yog qhov tseem ceeb, tshwj xeeb ua kom lub zog ntawm lub doped Si txheej thiab tus nqi thauj khoom-tuab, tab sis kuj ua haujlwm txoj haujlwm sib txawv ntawm ob qho khoom siv. Pov thawj li al. [38] qhia tau tias ρctsawg heev thaum cov khaubncaws sab nraud povtseg doped ua kom pom qis kev ua kom lub zog muaj nuj nqi, xws li cov neeg tau txais nrog nanocrystalline silicon khaubncaws sab nraud povtseg tsis siv cov txheej txheem amorphous.

Ntxiv mus, tus thawj-tus neeg nqa khoom ntom ntom ntawm TCO yuav tsum zoo tshaj 1 × 1020cm-3; qhov no yog qhov tshwj xeeb heev rau TCO / p tiv tauj, rau qhov kev sib txuam ntawm lub qhov thiab qhov hluav taws xob ntawm qhov sib tiv tauj yog qhov tseem ceeb. Kev xav txog kev xaiv thiab kev ua kom zoo ntawm TCO txheej, qhov no entails pom qhov zoo rau ne, uas yuav tsum tau siab txaus kom ua tiav qhov qis txaus ρcqhov tseem ceeb, tab sis, tib lub sij hawm, yuav tsum muaj tsawg li tsawg tau thiaj li yuav txo tau kab mob cab (FCA).

Hauv kev sim ntau dhau los, Y txheej nrog ntau dua cov cab kuj tau xaiv; Daim duab 8 qhia txog cov khoom uas muaj los ntawm kev ntsuas tus txheej txheem. Tseeb, rau TCO yoog, lub cell FF zoo tu qab tso, tab sis tus nqi ntawm kev txo qis hauv Jscvim yog FCA ntxiv. Zuag qhia tag nrho, CE tseem nce mus txog qib zoo sib xws uas pom rau cov pab pawg zoo tshaj plaws hauv Daim Duab 5, uas qhia tau qhov tseem ceeb ntawm kev ua tib zoo saib ntawm txheej thiab interface lub zog.

Daim duab 4. Tamsis no-cuam tshuam txog lub zog hluav taws xob poob (Ploss J) thiab series-thev-cuam tshuam lub zog poob (Ploss R) rau (a) rov qab-txuas thiab (b) pem hauv ntej-hlws ris SHJ hlwb. Kev hloov pauv kev ua tau zoo (CE) qhov tseem ceeb yog qhia los ntawm cov kab sau ua zas; cov kev poob no yog txheeb ze rau kev siv hnub ci cell nrog 23.3% CE, sawv cev los ntawm lub pob zeb diamond ntsuab ntawm (0,0). Cov cim puv muaj sawv cev rau 75nm-tuab TCOs (tus qauv) tab sis nrog cov txheej txheem tiv thaiv tsis kam (ARC) rau saum, thaum lub cim qhib sawv cev ua cov thinner (optimized) TCO txheej, kuj nrog ARC.

Txoj kev lag luam: cov nqi phiaj

Cov hom TCO hom niaj hnub siv hauv kev lag luam crystalline silicon PV yog cov hom phiaj tig tau, uas yog cov plhaub tog kheej kheej ntawm TCO cov khoom siv sib khi rau ntawm ib txoj raj thaub qab ua los ntawm cov hlau. Lub raj ntev ntev dua, ntau lub plhaub yuav tsum tau siv rau lub raj xa hluav taws xob. Qhov laj thawj yog vim li cas kev lag luam nyiam qhov hom phiaj no rau kev sib zog ntawm TCOs yog qhov kev siv ntau dua ntawm TCO cov khoom siv hom ntau dua li uas rau qhov hom phiaj ntawm hom phiaj TCO. Kev siv tus nqi ntawm lub hom phiaj cov khoom ua tau tiav nrog lub hom phiaj tig yog feem ntau ≥80%; qhov no yog qhov tshwj xeeb hauv qhov xwm txheej uas TCO cov ntaub ntawv kim, xws li Indium-based TCOs. Raws li hais txog TCOs hauv kev ua lag luam crystalline silicon PV, Indium-based TCOs yog qhov tseem ceeb vim lawv cov txheej txheej zoo kawg nkaus (zoo li tau qhia ua ntej). Txawm li cas los xij, qee tus neeg ua lag luam kuj tseem muab cov ntawv pov thawj zinc-TCOs rau tib lub hom phiaj. Qhov tseeb, muaj qhov zoo thiab qhov tsis zoo rau kev siv TCOs zinc-based. Ib qho kev ua tau zoo yog tus nqi qis dua ntawm zinc-based tube lub hom phiaj ntawm qhov ntev zoo ib yam rau cov ntawm indium-based phiaj, qhov tsawg dua conductivity ntawm zinc nthuav tawm qee qhov kev cuam tshuam hauv lub hnub ci cell tsim, raws li tau tham ua ntej thiab pom tau hauv daim duab 3.

Daim duab 6 qhia tau hais tias tus nqi phiaj tshwj xeeb rau ib cm3ntawm lub raj cov hom phiaj rau cov zinc-based TCOs thiab indium-based TCOs; nco ntsoov tias tus nqi ntawm cov raj thim rov qab tsis suav nrog cov nqi phiaj. Cov ntsiab lus cov ntsiab lus tau muab los ntawm cov neeg xa khoom hom thoob plaws ntiaj teb. Cov xov tooj me me ntawm cov ntsiab lus cov ntsiab lus rau TCOs-based TCOs tuaj yeem yog qhov tsis muaj kev txaus siab rau cov khoom ntawd pom los ntawm kev lag luam crystalline silicon PV txog tam sim no.

Qee qhov tawg hauv cov nqi phiaj nqi tshwm sim vim cov khoom sib txawv hauv cov pab pawg zinc thiab hauv pawg indium, lossis vim yog cov neeg muab khoom sib txawv. Cov ntsiab lus cov ntsiab lus hais txog cov nqi nce siab hauv ob pawg neeg yuav piav qhia los ntawm cov khoom sib xws tsawg thiab / lossis cov txheej txheem tsim nqi tsim thiab / lossis cov paj tau zoo. Cov ntaub ntawv qis dua cov ntsiab lus tau pom nyob hauv ob pawg yuav tsum yog tus neeg sawv cev tus nqi rau cov hnub ci cell tsim nrog ntau pua pua xyoo lub hom phiaj xav tau.

Kev sib piv ntawm tus nqi qis tshaj hauv ob pawg neeg pom tias Zn-based TCOs (phiaj nqi ~ $ 0.6 / cm3) tuaj yeem nyob ib puag ncig ib nrab tus nqi ntawm Kev-based TCOs (phiaj nqi ~ $ 2.6 / cm3)). Nws yuav tsum tau taw qhia, txawm li cas los xij, tias cov ntsiab lus cov ntsiab lus no yog ib qho kev hloov pauv ntawm qhov xwm txheej tam sim no thiab yuav sai sai no tej zaum dhau los ua kev tsis txaus ntseeg, nyob ntawm qhov kev hloov pauv ntawm cov khoom lag luam nrog kev xav txog cov khoom siv tsiaj, tshwj xeeb indium.

Daim duab 5. Kuv – V ntsuas ntawm 4cm2-qhov loj me bifacial SHJ hnub ci hlwb nrog ntau yam pem hauv ntej TCOs thiab ITO 97/3 nyob rau sab nraub qaum. ITO 95/5, DC sputtered los ntawm tub ntxhais lub hom phiaj ntawm HZB, tau suav nrog raws li kev siv.

Kev lag luam: ntau lawm

Dhau li ntawm qhov xav kom ua raws li indium-free TCOs nrog lub hom phiaj ntawm kev txhim kho kev siv nyiaj ua haujlwm (OPEX), nws yog qhov muaj txiaj ntsig zoo tshaj plaws kom muaj qhov siab ntim tsim cov khoom lag luam uas tuaj yeem tsim cov txheej txheem TCO zoo ntawm tus nqi qis. Daim duab 7 qhia tau zoo tshaj plaws ntawm XEA|nova L sputtering system los ntawm VON ARDENNE, tuaj yeem tso TCO cov khaubncaws sab nraud povtseg ntawm 8,000 M6 kev zam ib teev nyob rau theem pib, thiab thaum lub siab dua dhau los ntawm kev siv pob khoom tshiab. Nyob rau xyoo 2019 XEA|nova cov cuab yeej ua ib feem ntawm txoj kab kev tsim khoom lag luam ua tiav cov txiaj ntsig ntawm tes sab saum toj ntawm 24% siv TCO zaj duab xis zoo ib yam li cov uas tau tshawb xyuas ntawm no.

Yuav kom ua tiav qhov chaw siab, qhov tso nyiaj ntawm TCO cov khaubncaws sab nraud povtseg yuav tsum siab, uas tuaj yeem pom tau los ntawm kev siv lub zog DC loj rau lub raj xa dej. Txawm li cas los xij, TCO cov khoom tseem yuav tsum tau ceev cia thaum TCO npaj siab zog ntawm kev muaj zog ntau dua. Daim duab 8 qhia tau hais tias lub tshuab hluav taws xob muaj hluav taws xob thiab lub txim loj-tus neeg nqa khoom cov teeb meem ntawm TCO zaj duab xis, sputtered ntawm 4kW thiab 8kW los ntawm ceramic raj hom phiaj ntawm TCO hom 'Y'. Siab mob ntawm thaj tsam li ntawm 80 cm2/ Vs tuaj yeem ua tiav ntawm theem zog ntawm 4kW tom qab tso. Kev nce ntawm lub zog sputtering rau 8 kW txo qhov kev ua haujlwm siab tshaj plaws los ntawm qhov siab tshaj plaws ntawm 10%. Nws yog qhov nthuav tias cov kev mus ncig yuav tuaj yeem txuas ntxiv, nce txog 100 cm2/ Vs, los ntawm annealing cov yeeb yaj kiab rau 30 min ntawm 200 ° C, raws li pom hauv Daim Duab 8.

Daim duab 6. Cov phiaj nqi phiaj xwm tshwj xeeb ib cm3 ntawm cov khoom siv tsom rau indium-based thiab zinc-based TCOs.

Cov lus xaus

SHJ hnub ci xov tooj ntawm tes thev naus laus zis tau ua pov thawj los ua tus tseem ceeb ntawm txoj kev los nce nws txoj hauv kev hauv kev lag luam loj. Qhov no yog vim lub siab hloov ua kom tau zoo ua tau tiav thiab cov txheej txheem ntau lawm ntshiv.

Hais txog lub luag haujlwm ntawm TCOs, peb yam tseem yuav tsum tau hais kom txhawb rau SHJ thev naus laus zis kev cia siab ntawm kev ua kom muaj kev cuam tshuam ntxiv rau hauv kev lag luam hauv xov tooj hnub ci:

1. Txuas ntxiv txhim kho kev ua haujlwm ntawm tes.Qhov no tuaj yeem ua tiav los ntawm kev ua haujlwm ntawm kev ua haujlwm siab-TCOs uas tsim nyog rau kev ua ntau lawm. Nws tau pom tias lub siab-TCOs tuaj yeem kho nyob rau ntawm qhov chaw siab, thiab cov TCOs no tau kuaj hauv SHJ hnub ci hlwb. Txawm hais tias CE ntawm xws li SHJ cov hlwb tau siab, nws tseem poob qab ntawm qhov kev siv hlwb nrog qhov zoo tshaj plaws ITO pem hauv ntej TCO, txawm hais tias muaj qhov nqus qis dua thiab ua haujlwm siab dua qhov no tau los ntawm kev sib tiv tauj ntau dua ntawm TCOs nrog rau n- thiab / lossis p-doped cov tshuaj tiv thaiv silicon. Kev soj ntsuam zoo ntawm TCO thiab kev siv ntawm kev tiv tauj cov khaubncaws sab nraud povtseg thiab / lossis kev txhim kho ntawm lub ntsej muag yuav xav tau nyob rau hauv kev txiav txim siab txhawm rau txo cov kev tiv thaiv tsis tau ntawm cov kev cuam tshuam no thiab, yog li, sau cov txiaj ntsig tag nrho ntawm cov khoom zoo dua TCO.

2. Txo txo ​​kev siv cov khoom tsis tshua muaj neeg (thiab kim) cov ntaub ntawv, tshwj xeeb indium.Ib qho kev xaiv ntxim siab rau qhov kev ua tiav ntawm kev txuag tus nqi ntawm cov khoom siv yog kom txo tau TCO tuab; qhov no tseem zoo nkauj dua nrog tus nqi kim ua rau muaj kev siab dua (kev ua haujlwm siab) TCOs. Txawm li cas los xij, lwm cov kauj ruam ntawm cov txheej txheem tsim nyog yuav tsum tau tso nyiaj thib ob, tiv thaiv kev cuam tshuam (capping), txheej (ARC) nyob rau sab saum toj ntawm TCO hauv kev txiav txim txhawm rau txo qhov cuam tshuam poob. Lwm txoj kev, raws li muaj nyob hauv daim ntawv no, cov TCOs uas muaj qis dua (AZO hauv qhov piv txwv tau muab) tuaj yeem siv rau sab nrauv kev sib txuas sab hnub ci yam tsis muaj kev cuam tshuam rau CE. Qhov no nce qhov tseeb qhov twg tus nqi raug txhawj: hauv qhov txheeb xyuas tau nthuav tawm, ZnO-based cov hom phiaj pom tus nqi qis dua ntawm $ 0.6 / cm3rau phiaj cov khoom, piv nrog $ 2.6 / cm3rau Qhov raws phiaj. Qhov tsis tshua muaj kev ruaj khov ntawm AZO tuaj yeem dealt los ntawm, piv txwv, capping nws nrog dielectric txheej (a-SiO2lossis a-SiNx).

3. Txo txo ​​cov khoom siv PVD.Kev ntsuas kom dav thiab nce ntxiv ntawm txoj kab ntawm TCO cov kab ntau lawm yog txoj kev mus, nrog DC sputtering tab tom npaj rau kev ua tiav ntawm kev ua tiav siab ntawm TCOs siab.

Kev Ua Tsaug

Nyiaj txiag los ntawm German tsoomfwv saib xyuas rau kev tswj hwm nyiaj txiag thiab lub zog (BMWi) tsis pub dhau lub moj khaum ntawm qhov txheej txheem Dynasto raws li # 0324293 yog kev lees paub lees paub.

Daim duab 8. Cov khoom siv hluav taws xob ntawm TCO txheej sputtered ntawm 4kW thiab 8kW los ntawm ceramic raj hom phiaj ntawm TCO yam 'Y', hauv lub xeev tso cia thiab tom qab annealing rau 30 min ntawm 200 ° C hauv qhov chaw puag ncig.

Kev Ua Tsaug

Nyiaj txiag los ntawm German tsoomfwv saib xyuas rau kev tswj hwm nyiaj txiag thiab lub zog (BMWi) tsis pub dhau lub moj khaum ntawm qhov txheej txheem Dynasto raws li # 0324293 yog kev lees paub lees paub.

Ua tim khawv

[1] Chunduri, SK& Schmela, M. 2019, “Heterojunction hnub ci kev tsim hluav taws xob”, Taiyang News [http://taiyangnews.info/TaiyangNews_Report_ Heterojunction_Solar_Technology_2019_EN_ download_version2.pdf].

[2] Ballif, C. li al. 2019, "Kev daws txhua yam ntaws rau silicon heterojunction technology", Photovoltaics International, 42nd Edition, p. 85.

[3] Hais ncaj ncaj, G.& Köstlin, H. 1982, "Cov khoom hluav taws xob thiab cov qauv tsis xws ntawm cov khaub noom tiv thaiv txhuas pob zeb oxide txheej", Appl. Lub Cev. A, Vol. 27, No. 4, pp. 197–206 [https: // doi. org / 10.1007 / BF00619080].

[4] Hamberg, I.& Granqvist, CG 1986, "Evaporated Sn» doped In2O3 zaj duab xis: Cov khoom siv kho qhov muag yooj yim thiab cov ntawv thov kom muaj zog "txuag qhov rai", J. Appl. Lub cev., Vol. 60, No. 11, pp. R123 – R160 [https: // doi. org / 10.1063 / 1.337534].

[5] Balestrieri, M. li al. 2011, "Cov cim thiab kev ua haujlwm zoo ntawm indium tin oxide zaj duab xis rau heterojunction solar cells", Sol. Lub Zog Hluav Taws Xob. Sol. Hlwb, Vol. 95, No. 8, pp. 2390–2399 [https://doi.org/10.1016/j.solmat.2011.04.012].

[6] Koida, T.& Kondo, M. 2007, “Cov kev tshawb fawb sib piv ntawm cov pob tshab conductive Ti-, Zr-, thiab Sn-doped In2O3 siv txoj kev sib txuas”, J. Appl. Lub cev., Vol. 101, No. 6, p. 063713 [https: // doi. org / 10.1063 / 1.2712161].

[7] Kobayashi, E., Watabe, Y.& Yamamoto, T. 2015, "Muaj lub siab ua rau cov pob tshab nyias nyias ntawm cerium-doped hydrogenated indium oxide", Appl. Lub Cev. Expr., Vol. 8, No. 1, p. 015505 [https: // doi. org / 10.7567 / APEX.8.015505].

[8] Macco, B. li al. 2014, "Muaj lub zog siab In2O3: H pob tshab conductive oxides npaj los ntawm atomic txheej deposition thiab cov theem theem crystallization", physica cov xwm txheej solidi (RRL), Vol. 8, No. 12, pp. 987–990 [https://doi.org/10.1002/pssr.201409426].

[9] Erfurt, D. li al. 2019, "Txhim kho cov khoom hluav taws xob zoo ntawm pulsed DC magnetron sputtered hydrogen doped indium oxide tom qab annealing hauv huab cua", Mater. Khej. Semicon. Proc., Vol. 89, pp. 170–175 [https://doi.org/10.1016/j.mssp.2018.09.012].

[10] Yu, J. li al. 2016, "Tungsten doped indium oxide zaj duab xis: Npaj rau bifacial tooj liab metallization ntawm silicon heterojunction solar cell", Sol. Lub Zog Hluav Taws Xob. Sol. Hlwb, Vol. 144, pp. 359–363 [https: // doi. org / 10.1016 / j.solmat.2015.09.033].

[11] Tsev Tshiab, PF li al. Xyoo 2005, "Muaj hluav taws xob hluav taws xob ntau W-doped In2O3 nyias zaj duab xis los ntawm mem tes laser kev rho tawm", Appl. Lub Cev. Lett., Vol. 87, No. 11, p. 112108 [https://doi.org/10.1063/1.2048829].

[12] Asikainen, T., Ritala, M.& Leskelä, M. 2003, "Atomic txheej deposition kev loj hlob ntawm zirconium doped In2O3 films", Nyias Ua Films, Vol. 440, No. 1, sab 152–154 [https://doi.org/10.1016/S0040- 6090 (03) 00822-8].

[13] Morales-Masis, M. li al. 2018, "Muaj tus cwj pwm zoo thiab ua tau dav dua Zr-doped In2O3 ua hluav taws xob rau sab hauv cov hnub ci", IEEE J. Photovolt., Pp. 1–6 [https://doi.org/10.1109/ JPHOTOV.2018.2851306].

[14] Muaj Dab Neeg ‐ Masis, M. li al. 2017, "Transparent electrodes rau txuag optoelectronics", Adv. Tshaiv. Mater., Vol. 3, No. 5, p. 1600529 [https: // doi. org / 10.1002 / aelm.201600529].

[15] Delahoy, AE& Guo, SY 2005, "Transparent thiab semitransparent ua zaj duab xis cia los ntawm reactive-ib puag ncig, khoob lug cathode sputtering", J. Vac. Khej. Technol. A, Vol. 23, No. 4, phab 1215–1220 [https://doi.org/10.1116/1.1894423].

[16] van Hest, MFAM li al. Xyoo 2005, "Titaniumdoped indium oxide: Lub siab muaj peev xwm ua kom pom tseeb", Appl. Lub Cev. Lett., Vol. 87, No. 3, p. 032111 [https://doi.org/10.1063/1.1995957].

[17] Meng, Y. et al. Xyoo 2001, "Ib qho tshiab pob tshab conductive nyias zaj duab xis In2O3: Mo", Cov Khoom Ua Si nyias nyias, Vol. 394, No. 1–2, pp. 218–222 [https://doi.org/10.1016/ S0040-6090 (01) 01142-7].

[18] Yoshida, Y. li al., "Kev tsim kho hluav taws xob radiofrequency magnetron sputtered indium molybdenum oxide", J. Vac. Khej. Technol. A, Vol. 21, Zauv 4, phab 1092–1097 [https://doi.org/10.1116/1.1586281].

[19] Warmsingh, C. li al. Xyoo 2004, "Muaj lub siab ua kom pom tseeb Mo-doped In2O3 nyias zaj duab xis los ntawm mem tes laser kev rho tawm", J. Appl. Lub cev., Vol. 95, No. 7, phab 3831–3833 [https://doi.org/10.1063/1.1646468].

[20] Ruske, F. li al. 2010, "Txhim kho kev thauj khoom hluav taws xob hauv Al-doped zinc oxide los ntawm kev kho cua sov", J. Appl. Lub cev., Vol. 107, No. 1, p. 013708 [https://doi.org/10.1063/1.3269721].

[21] Hüpkes, J. li al. 2014, "Damp tshav kub ruaj khov doped zinc oxide zaj duab xis", Nyias Ua Films, Vol. 555, pp. 48–52 [https://doi.org/10.1016/j.tsf.2013.08.011].

[22] Greiner, D. li al. 2011, "Damp tshav kub ruaj khov ntawm Al-doped zinc oxide zaj duab xis ntawm du thiab ntxhib substrates", Nyias Ua Films, Vol. 520, No. 4, pp. 1285– 1290 [https://doi.org/10.1016/j.tsf.2011.04.190].

[23] Morales-Vilches, AB li al. 2018, "ITO-dawb silicon heterojunction lub hnub ci hlwb nrog ZnO: Al / SiO2 pem hauv ntej electrodes nce mus txog kev hloov ua haujlwm tau zoo ntawm 23%", IEEE J. Photovolt., Vol. 9, No. 1, pp. 1–6 [https: // doi.org/10.1109/JPHOTOV.2018.2873307].

[24] Bivour, M. li al. 2014, "Silicon heterojunction rear emitter lub hnub ci hlwb: Cov kev txwv tsawg dua ntawm cov khoom optoelectrical ntawm sab pem hauv ntej TCOs", Sol. Lub Zog Hluav Taws Xob. Sol. Hlwb, Vol. 122, pp. 120–129 [https: // doi.org/10.1016/j.solmat.2013.11.029].

[25] Basset, L. li al. 2018, "Series tsis kam cuam tshuam ntawm silicon heterojunction lub hnub ci hlwb tsim ntawm CEA-INES kev sim", Proc. 35. EU PVSEC, Zaub pob, Belgium, pp. 721–724 [https: // doi. org / 10.4229 / 35thEUPVSEC20182018-2DV.3.21].

[26] Ling, ZP li al. 2015, "Peb-tus lej hais txog qhov sib txawv ntawm hybrid heterojunction silicon wafer hnub ci hlwb nrog heterojunction rear taw tes sib cuag", AIP Adv., Vol. 5, No. 7, p. 077124 [https: // doi.org/10.1063/1.4926809].

[27] Cruz, A. li al. 2019, "Zoo ntawm pem hauv ntej TCO ntawm kev ua tau zoo ntawm sab nraub qaum-txuas silicon heterojunction lub hnub ci hlwb: Kev pom ntawm kev sim thiab sim", Sol. Lub Zog Hluav Taws Xob. Sol. Hlwb, Vol. 195, pp. 339–345 [https://doi.org/10.1016/j. solmat.2019.01.047].

[28] Wang, E.-C. li al. 2019, "Ib txoj hauv kev yooj yim nrog cov qauv ntsuas tawm kom rho tawm heterojunction solar cell series tivthaiv cov khoom sib txuas thiab kom rho tawm A-Si: H (i / p) kom pom tseeb cov ntsiab lus oxide tiv taus tiv", AIP Conf. Proc., Vol. 2147, Zaj 1, p. 040022 [https://doi.org/10.1063/1.5123849].

[29] Cruz, A. li al. 2019, "Cawv ntawm silicon txheej ntawm kev loj hlob ntawm ITO thiab AZO hauv silicon heterojunction solar cells", IEEE J. Photovolt., Pp. 1-7 [https://doi.org/10.1109/JPHOTOV.2019.2957665].

[30] Muñoz, D.& Roux, D. 2019, "Cov kev sib tw rau qhov kev ua tau zoo hauv kev tsim khoom: Vim li cas qhov kev hloov pauv tam sim no npaj rau kev ua lag luam", Proc. 36th EU PVSEC, Marseille, Fabkis, nplooj 1-20.

[31] Strahm, B. li al. 2019, "'HJT 2.0' kev txhim kho kev txhim kho thiab cov txiaj ntsig tsim nqi rau silicon heterojunction cell ntau lawm", Proc. 36th EU PVSEC, Marseille, Fabkis, p. 300–303 [https: // doi. org / 10.4229 / EUPVSEC20192019-2EO.1.3].

[32] Zhang, D. li al. 2013, "Tsim thiab fabricationof SiOx / ITO txheej ob txheej txheej los tiv thaiv kev cuam tshuam rau heterojunction silicon solar cells", Sol. Lub Zog Hluav Taws Xob. Sol. Hlwb, Vol. 117, pp. 132–138 [https: // doi. org / 10.1016 / j.solmat.2013.05.044].

[33] Geissbühler, J. li al. 2014, "Silicon heterojunction solar hlwb nrog tooj liab-plated daim phiaj electrodes: xwm txheej thiab sib piv nrog cov xim tuab-zaj duab xis cov tswv yim", IEEE J. Photovolt. 4, No. 4, pp. 1055–1062 [https://doi.org/10.1109/ JPHOTOV.2014.2321663].

[34] Herasimenka, SY li al. 2016, "ITO / SiOx: H stacks rau silicon heterojunction lub hnub ci hlwb", Sol. Lub Zog Hluav Taws Xob. Sol. Hlwb, Vol. 158, Ntu 1, p. 98–101 [https: // doi.org/10.1016/j.solmat.2016.05.024].

[35] Santbergen, R. 2016, "Phau Ntawv rau lub hnub ci cell kho qhov muag software: GENPRO4", Cov Khoom Siv Photovoltaic thiab Cov Tuav Haujlwm, Delft University of Technology.

[36] Haschke, J. li al. 2020, "Kev thauj cov khoom tom qab hauv silicon hnub ci hlwb", J. Appl. Lub cev., Vol. 127 [https: // doi. org / 10.1063 / 1.5139416].

[37] Bivour, M. li al. 2012, "Kev txhim kho a-Si: H (p) rov emitter sib cuag ntawm n-hom silicon hnub ci hlwb", Sol. Lub Zog Hluav Taws Xob. Sol. Hlwb, Vol. 106, pp. 11–16 [https: // doi. org / 10.1016 / j.solmat.2012.06.036].

[38] Pov thawj, P. li al. 2018, "Kev ntsuas qhov ntsuas ntawm qhov sib cuag rau cov hauj lwm siab IBC-SHJ hnub ci hlwb", Sol. Lub Zog Hluav Taws Xob. Sol. Hlwb, Vol. 186, pp. 66–77 [https://doi.org/10.1016/j.solmat.2018.06.021].

[39] Tus neeg tsis muaj zog, C. li al. 2019, “Tiv Tauj tiv dhau ntawm TCO / a-Si: H / c-Si heterojunction”, Proc. 36th EU PVSEC, Marseille, Fab Kis, p. 538–540 [https: // doi. org / 10.4229 / EUPVSEC20192019-2DV.1.48].

[40] Messmer, C. li al. 2019, "Cuam Tshuam ntawm interfacial oxides ntawm TCO / doped Si nyias zaj duab xis tiv tauj ntawm tus neeg nqa khoom thauj khoom ntawm kev tiv thaiv kev sib kis", IEEE J. Photovolt., Pp. 1–8 [https://doi.org/10.1109/ JPHOTOV.2019.2957672 ].

[41] Cox, RH& Strack, H. 1967, "Ohmic hu rau GaAs pab kiag li lawm", solid-State electronics., Vol. 10, No. 12, pp. 1213–1218 [https://doi.org/10.1016/0038- 1101 (67) 90063-9].

[42] Fellmeth, T., Clement, F.& Biro, D. 2014, "Kev sim qauv ntawm kev muaj feem ntsig txog silicon hnub ci hlwb", IEEE J. Photovolt., Vol. 4, No. 1, phab 504–513 [https://doi.org/10.1109/JPHOTOV.2013.2281105].





Xa kev nug
Yuav daws cov teeb meem zoo li cas tom qab muag?
Nqa cov duab ntawm cov teeb meem thiab xa tuaj rau peb.Tom qab paub meej cov teeb meem, peb
yuav ua kom txaus siab rau koj hauv ob peb hnub.
tiv tauj peb